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(R)
STE24NA100
N - CHANNEL 1000V - 0.35 - 24A - ISOTOP FAST POWER MOSFET
TYPE STE24NA100
s s s s s s
V DSS 1000 V
R DS(on) < 0.385
ID 24 A
TYPICAL RDS(on) = 0.35 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM (*) P tot T s tg Tj V ISO Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS)
o o o
Value 1000 1000 30 24 15 96 450 3.6 -55 to 150 150 2500
Un it V V V A A A W W /o C
o o
C C
V 1/8
(*) Pulse width limited by safe operating area
October 1998
STE24NA100
THERMAL DATA
R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05
o o
C/W C/W
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 12 2000 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 500 A V GS = 0 Min. 1000 50 250 400 Typ. Max. Unit V A A nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 30 V
T c = 125 oC
ON ()
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V DS > ID(o n) x R DS(on )ma x V GS = 10 V Test Con ditions I D = 1 mA I D = 12 A 24 Min. 2.25 Typ. 3 0.35 Max. 3.75 0.385 Unit V A
DYNAMIC
Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D = 12 A V GS = 0 Min. 15 14000 1200 300 19000 1600 390 Typ. Max. Unit S pF pF pF
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STE24NA100
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 500 V I D = 12 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 800 V I D = 24 A V GS = 10 V Min. Typ. 40 55 470 43 226 Max. 56 77 660 Unit ns ns nC nC nC
SWITCHING OFF
Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 800 V I D = 24 A V GS = 10 V R G = 4.7 (see test circuit, figure 5) Min. Typ. 110 25 150 Max. 154 35 210 Unit ns ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 24 A V GS = 0 1.4 41 60 I SD = 24 A di/dt = 100 A/s o T j = 150 C V DD = 100 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 24 96 1.6 Unit A A V s C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
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STE24NA100
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STE24NA100
Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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STE24NA100
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STE24NA100
ISOTOP MECHANICAL DATA
DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248
G B
A
O
N D E F
J C K L M
H
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STE24NA100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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